Ferroelectric memory device comprising extended memory unit

ABSTRACT

A ferroelectric memory device including an extended memory unit features a cell array block, a data bus unit, an input/output circuit unit, an extended memory unit and an extended memory controller. The cell array block includes a main bitline and a plurality of sub bitlines. The main bitline is connected between a main bitline pull-up controller and a column selection controller, and each sub bitline is connected to the main bitline and a unit cell. The data bus unit is connected to the column selection controller. The input/output circuit unit includes a sense amplifier array connected to the data bus unit. The extended memory unit shares the main bitline included in the cell array block and includes a plurality of cell blocks. The extended memory controller controls the extended memory unit in response to an external control signal.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a ferroelectric memory device, and morespecifically, to a ferroelectric memory device including an extendedmemory unit to store additional information such as device information.

2. Description of the Prior Art

Generally, a ferroelectric random access memory (hereinafter, referredto as ‘FRAM’) has attracted considerable attention as next generationmemory device because it has a data processing speed as fast as a DRAM(Dynamic Random Access Memory) and conserves data even after the poweris turned off.

The FRAM includes capacitors similar to the DRAM, but the capacitorshave a ferroelectric substance for utilizing the characteristic of ahigh residual polarization of the ferroelectric substance in which datais not low even after eliminating an electric field applied thereto.

FIG. 1 is a characteristic curve illustrating a hysteresis loop of ageneral ferroelectric substance. As shown in FIG. 1, a polarizationinduced by an electric field does not vanish but keeps some strength(‘d’ or ‘a’ state) even after the electric field is cleared due toexistence of a residual (or spontaneous) polarization. These ‘d’ and ‘a’states may be assigned to binary values of ‘1’ and ‘0’ for use as amemory cell.

FIG. 2 is a structural diagram illustrating a unit cell of the FRAMdevice. As shown in FIG. 2, the unit cell of the conventional FRAM isprovided with a bitline BL arranged in one direction and a wordline WLarranged in another direction vertical to the bitline BL. A plateline PLis arranged parallel to the wordline and spaced at a predeterminedinterval. The unit cell is also provided with a transistor T1 having agate connected to an adjacent wordline WL and a source connected to anadjacent bitline BL, and a ferroelectric capacitor FC1 having the firstterminal of the two terminals connected to the drain terminal of thetransistor T1 and the second terminal of the two terminals connected tothe plateline PL.

FIG. 3 a is a timing diagram illustrating a write mode of theconventional FRAM.

Referring to FIG. 3 a, when a chip enable signal CSBpad appliedexternally transits from a high to low level and simultaneously a writeenable signal WEBpad also transits from a high to low level, the arrayis enabled to start a write mode. Thereafter, when an address is decodedin a write mode, a pulse applied to a corresponding wordline transitsfrom a “low” to “high” level, thereby selecting the cell.

In order to write a binary logic value “1” in the selected cell, a“high” signal is applied to a bitline BL while a “low” signal is appliedto a plateline PL. In order to write a binary logic value “0” in thecell, a “low” signal is applied to a bitline BL while a “high” signal isapplied to a plateline PL.

FIG. 3 b is a timing diagram illustrating a read mode of theconventional FRAM. Referring to FIG. 3 b, when a chip enable signalCSBpad externally transits from a “high” to “low” level, all bitlinesare equalized to a “low” level by an equalization signal beforeselection of a required wordline.

After each bitline is deactivated, an address is decoded to transit asignal on the required wordline from a “low” to “high” level, therebyselecting a corresponding unit cell. A “high” signal is applied to aplateline of the selected cell to cancel a data Qs corresponding to thelogic value “1” stored in the FRAM. If the logic value “0” is stored inthe FRAM, a corresponding data Qns will not be destroyed.

The destroyed and non-destroyed data output different values,respectively, according to the above-described hysteresis loopcharacteristics. As a result, a sense amplifier senses logic values “1”or “0”. In other words, as shown in the hysteresis loop of FIG. 1, thestate moves from ‘d’ to ‘f’ when the data is destroyed while the statemoves from ‘a’ to ‘f’ when the data is not destroyed.

As a result, the destroyed data amplified by the enabled sense amplifieroutputs a logic value “1” while the non-destroyed data amplified by thesense amplifier outputs a logic value “0”. The original data isdestroyed after the sense amplifier amplifies the data. Accordingly,when a “high” signal is applied to the required wordline, the platelineis disabled from “high” to “low”, thereby recovering the original data.

The conventional ferroelectric memory device does not comprise anextended memory unit in the memory device to store information such asdevice ID, manufacturer code and security code. As a result, anadditional memory unit to store the additional information is requiredoutside of the memory.

In the systems using a conventional ferroelectric memory device, thereis installed an Error Correcting Circuit (ECC) to repair a fail cell ofthe memory device in an external system of the memory. Therefore, thesystem requires to perform an error-correcting operation on fail cells,thereby degrading the operation performance.

SUMMARY OF THE INVENTION

Accordingly, it is an object of the present invention to provide aferroelectric memory device including an extended memory unit therein.In an embodiment, the extended memory unit is configured to have thesame structure as that of a main cell array block. As a result, aconventional control circuit may be used for controlling the extendedmemory unit, and an additional control circuit is required only for aspecial function, and the layout of a chip does not increase so much.

In an embodiment, the ferroelectric memory device comprises an ECC(Error Correcting Circuit) controller therein. The ECC controllerperforms a repair operation on fail cells in cooperation with theextended memory unit.

In an embodiment, there is provided a ferroelectric memory deviceincluding an extended memory unit comprising a cell array block, a databus unit, an input/output circuit unit, an extended memory unit and anextended memory controller. The cell array block includes a main bitlineand a plurality of sub bitlines. The main bitline is connected between amain bitline pull-up controller and a column selection controller, andeach sub bitline is connected to the main bitline and a plurality ofunit cells. The data bus unit is connected to the column selectioncontroller. The input/output circuit unit includes a sense amplifierarray connected to the data bus unit. The extended memory unit sharesthe main bitline included in the cell array block and includes aplurality of cell blocks. The extended memory controller controls theextended memory unit in response to an external control signal.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a characteristic curve illustrating a hysteresis loop of ageneral ferroelectric substance.

FIG. 2 is a structural diagram illustrating a conventional FRAM cell.

FIGS. 3 a and 3 b are timing diagrams illustrating read and writeoperations of a conventional FRAM cell.

FIG. 4 is a block diagram illustrating a ferroelectric memory deviceincluding an extended memory unit according to an embodiment of thepresent invention.

FIG. 5 is a circuit diagram illustrating a main bitline pull-upcontroller of FIG. 4.

FIG. 6 is a circuit diagram illustrating a column selection controllerof FIG. 4.

FIGS. 7 a and 7 b are circuit diagrams illustrating sub cell blocks of acell array block of FIG. 4.

FIGS. 8 a and 8 b are timing diagrams illustrating read/write operationsof the sub cell block of FIG. 7 a.

FIG. 9 is a block diagram illustrating a first example of the extendedmemory unit of FIG. 4.

FIGS. 10 a and 10 b are circuit diagrams illustrating the extendedmemory unit of FIG. 9.

FIG. 11 is a block diagram illustrating a second example of the extendedmemory unit of FIG. 4.

FIGS. 12 a and 12 b are circuit diagrams illustrating the extendedmemory unit of FIG. 11.

FIG. 13 is a block diagram illustrating a third example of the extendedmemory unit of FIG. 4.

FIGS. 14 a and 14 b are circuit diagrams illustrating the extendedmemory unit of FIG. 13.

FIG. 15 is a block diagram illustrating a fourth example of the extendedmemory unit of FIG. 4.

FIGS. 16 a and 16 b are circuit diagrams illustrating the extendedmemory unit of FIG. 15.

FIG. 17 is a block diagram illustrating the structure of the extendedmemory unit including a redundancy cell region and an extended cellregion.

FIG. 18 is a block diagram illustrating a register for controlling theextended memory unit.

FIG. 19 is a circuit diagram illustrating the register of FIG. 18.

FIG. 20 a is a timing diagram illustrating the write operation of theregister of FIG. 19.

FIG. 20 b is a timing diagram illustrating the read operation of theregister of FIG. 19.

FIG. 21 is a block diagram illustrating a ferroelectric memory deviceincluding an extended memory unit according to another embodiment of thepresent invention.

FIG. 22 is a block diagram illustrating the operation of an ECCcontroller and an external system.

FIG. 23 is a block diagram illustrating a structure of a memory chipregion of FIG. 22.

FIG. 24 is a block diagram illustrating a function of the ECC controllerof FIG. 21.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The present invention will be described in detail with reference to theattached drawings.

FIG. 4 is a block diagram illustrating a ferroelectric memory deviceincluding an extended memory unit according to an embodiment of thepresent invention.

In an embodiment, the ferroelectric memory device comprises a cellregion 1, a data bus unit 40, an input/output control region 2 and anextended memory controller 200.

The cell region 1 includes a main bitline pull-up controller 20, a cellarray block 10, an extended memory unit 100 and a column selectioncontroller 30. The ferroelectric memory device has a bitline structureincluding a main bitline and a plurlaity of sub bitlines. Each subbitline is connected to the main bitline and a plurality of unit cells.Each sub bitline is connected to the main bitline via a switch. When aspecific cell is accessed, only a sub bitline including thecorresponding cell is connected to the main bitline. The main bitlinepull-up controller 10 pulls up the main bitline to a positive voltage.The cell array block 10 includes a plurality of sub cell blocks. Theextended memory unit 10 is configured to have the same structure as thatof the sub cell block. The column selection controller 30 is connectedto the main bitline and a data bus line in the data bus unit 40.

The input/output control region 2 includes a common sense amplifierarray 50, a read/write controller 60 and a data input/output buffer 70.In a read mode, data stored in the cell array block 10 are outputtedinto the data input/output buffer 70 via the sense amplifier array 50.The sense amplifier array 50 amplifies the read data and stores the datain the same cell to restore cell data destroyed in the read mode. In awrite mode, the sense amplifier array 50 amplifies externally inputteddata and provides the amplified data to a cell.

FIG. 5 is a circuit diagram illustrating the main bitline pull-upcontroller 20 of FIG. 4. In a precharge mode, the main bitline pull-upcontroller 20 pulls up the main bitline to Vpp(Vcc) in response to acontrol signal MBPUC.

FIG. 6 is a circuit diagram illustrating the column selection controller30 of FIG. 4. In read/write modes, the column selection controller 30connects a data bus line to the main bitline in response to controlsignals CSN and CSP.

FIGS. 7 a and 7 b are circuit diagrams illustrating sub cell blocks ofthe cell array block 10 of FIG. 4. The configuration of the sub cellblock is divided into two types depending on arrangement of a platelinePL<n>. One type is an open bitline configuration where a plateline PL<n>is arranged in each unit cell (see FIG. 7 a). The other type is a foldedbitline configuration where a plateline PL<n> is arranged in every twounit cells (see FIG. 7 b).

When the two types have the same number of cells, a main bitline MBL ofthe open bitline configuration corresponds to two main bitlines MBL ofthe folded bitline configuration. In other words, the wholeconfiguration of FIG. 7 b corresponds to a half configuration of FIG. 7a (see symbols of the elements). Since the principle of operations ofboth types is in common, the operations will be explained based on theopen bitline configuration.

A sub cell block comprises a sub bitline SBL and NMOS transistors N1˜N5.The sub bitline SBL is commonly connected to a plurality of unit memorycells. Each unit memory cell is connected to a wordline WL<n> and aplateline PL<n>. The NMOS transistor N1 for regulating current has agate connected to a first terminal of the sub bitline SBL, and a drainconnected to a main bitline MBL. The NMOS transistor N2 has a gateconnected to a control signal MBSW, a drain connected to a source of theNMOS transistor N1, and a grounded source. The NMOS transistor N3 has agate connected to a control signal SBPD, a drain connected to a secondterminal of the sub bitline SBL, and a grounded source. The NMOStransistor N4 has a gate connected to a control signal SBSW2, a sourceconnected to the second terminal of the sub bitline SBL, and a drainconnected to a control signal SBPU. The NMOS transistor N5 has a gateconnected to a control signal SBSW1, a drain connected to the mainbitline MBL, and a source connected to the second terminal of the subbitline SBL.

A main bitline MBL is connected to a plurality of sub bitlines SBL. Whena cell is accessed, a sub bitline SBL connected to the correspondingcell is connected to the main bitline MBL. Therefore, the driving loadof the main bitline MBL is reduced to that of one sub bitline SBL. Here,the sub bitline SBL is connected to the main bitline MBL by the controlsignal SBSW1.

The pull-down NMOS transistor N3 regulates a potential of the subbitline SBL to a ground level when the control signal SBPD is activated.

The control signal SBPU regulates a power voltage to be supplied to thesub bitline SBL. When a high voltage is required, a voltage higher thana VCC voltage is supplied.

The control signal SBSW1 controls signal flow between the sub bitlineSBL and the main bitline MBL. The control signal SBSW2 controls signalflow between the control signal SBPU and the sub bitline SBL. The subbitline SBL is connected to a plurality of unit cells.

The sub bitline SBL connected to the gate of the NMOS transistor N1controls a sensing voltage of the main bitline MBL.

FIG. 8 a is a timing diagram illustrating a write operation of the subcell block of FIG. 7 a.

If an address is inputted and a write enable signal is activated (t1),the wordline WL and the plateline PL are activated. Charges stored in acell move to the bitline and a data level of the cell (t2, t3) isdetected.

The main bitline is connected to a positive power via a resistivetransistor (not shown). If data of the cell is “high”, the sub bitlineSBL also becomes “high”. Since current flowing in the NMOS transistor N1becomes larger, the voltage drop of the resistive transistor (not shown)becomes large. As a result, a voltage of the main bitline becomes lowerthan the reference level. On the other hand, if data of the cell is“low”, the sub bitline SBL also becomes “low”. Since current flowing inthe NMOS transistor N1 becomes smaller, the voltage drop of theresistive transistor (not shown) becomes small. As a result, a voltageof the main bitline becomes higher than the reference level. In thisway, data stored in the cell can be detected.

In an interval t4, a self-boosting operation is prepared. If the controlsignal SBSW2 becomes “high” while the control signal SBPU is maintainedat a low level, charges are charged in a parasitic capacitor between thegate and the source or the drain of the NMOS transistor N4. In aninterval t5, if the control signal SBPU is “high”, potentials of thecontrol signal SBSW2, the sub bitline SBL and the wordline WL areboosted by potential differences generated by the charges in theparasitic capacitors. In the interval t5, data “1” is automaticallystored in the cell because the sub bitline SBL is “high” and theplateline PL is “low”.

If data outputted into the main bitline MBL through the input/outputbuffer is “0”, the control signal SBSW1 is activated and the controlsignal SBSW2 is inactivated. Then, if the plateline PL is “high”, thesub bitline SBL becomes “low”. As charges stored in the cell move to thesub bitline SBL, the data “0” is written in the cell (t6). On the otherhand, when data outputted to the main bitline MBL is “1”, voltages ofthe plateline PL and the sub bitline SBL become both “high”. As aresult, the stored data “1” of the interval t5 is maintained.

FIG. 8 b is a timing diagram illustrating a read operation of the subcell block of FIG. 7 a.

In intervals t2 and t3, a level of a signal written in a cell isdetected. In an interval t5, data “1” is written. In an interval t6,data “0” is restored.

The operations in the intervals t2˜t4 are identical to those of FIG. 8a. After a read operation, a restore operation to restore destroyed dataof a cell in the read operation is required. In the intervals t5 and t6,a restore operation is performed. In the interval t5, data “1” isrestored regardless of the originally stored value. In the interval t6,data “0” is restored. The detail explanation of the restore operation isomitted because it is identical to the write operation.

FIG. 9 is a block diagram illustrating a first example of the extendedmemory unit 100 of FIG. 4. In the first example, the extended memoryunit 100 is configured to have the same structure as that of the subcell block 21 of FIG. 7 a or 7 b, and to use the whole unit cells as amemory region.

FIGS. 10 a and 10 b are circuit diagrams illustrating the extendedmemory unit 100 of FIG. 9. When the sub cell block 21 is configured tohave an open bitline type, the extended memory unit 100 is alsoconfigured to have the open bitline type (see FIG. 10 a). When the subcell block 21 is configured to have a folded bitline type, the extendedmemory unit 100 is also configured to have the folded bitline type (seeFIG. 10 b). The extended memory unit 100 can include a plurality of cellblocks shown in FIG. 10 a or 10 b.

FIG. 11 is a block diagram illustrating a second example of the extendedmemory unit 100 of FIG. 4. In the second example, the extended memoryunit 10 is configured to have the same structure as that of the sub cellblock 21. The number of unit cells in the extended cell region 110 issmaller than that of unit cells in the sub cell block 21. The extendedmemory unit 100 is connected to a dummy capacitor 120 for compensatingfor difference in capacitance resulting from difference in the number ofthe unit cells, thereby having the same driving characteristic as thatof the sub cell block 21.

FIGS. 12 a and 12 b are circuit diagrams illustrating the extendedmemory unit 100 of FIG. 11. When the sub cell block 21 is configured tohave an open bitline type, the extended memory unit 100 is alsoconfigured to have the open bitline type (see FIG. 12 a). When the subcell block 21 is configured to have a folded bitline type, the extendedmemory unit 10 is also configured to have the folded bitline type (seeFIG. 12 b).

FIG. 13 is a block diagram illustrating a third example of the extendedmemory unit 100 of FIG. 4. In the third example, the extended memoryunit 100 includes the extended cell region 110 and a redundancy cellregion 130.

FIGS. 14 a and 14 b are circuit diagrams illustrating the extendedmemory unit 100 of FIG. 13. When the sub cell block 21 is configured tohave an open bitline type, the extended memory unit 100 is alsoconfigured to have the open bitline type (see FIG. 14 a). When the subcell block 21 is configured to have a folded bitline type, the extendedmemory unit 10 is also configured to have the folded bitline type (seeFIG. 14 b).

FIG. 15 is a block diagram illustrating a fourth example of the extendedmemory unit 100 of FIG. 4. The extended memory unit 100 includes thesmaller number of unit cells than that of the unit cells in the sub cellblock 21. Some unit cells are allotted to the redundancy cell region130, the other unit cells to the extended cell region 110. The cellblock 100 includes dummy capacitor 120 that compensates for differencein capacitance resulting from difference in the number of the unit cells

FIGS. 16 a and 16 b are circuit diagrams illustrating the extendedmemory unit 100 of FIG. 15. When the sub cell block 21 is configured tohave an open bitline type, the extended memory unit 100 is alsoconfigured to have the open bitline type (see FIG. 16 a). When the subcell block 21 is configured to have a folded bitline type, the extendedmemory unit 10 is also configured to have the folded bitline type (seeFIG. 16 b).

FIG. 17 is a block diagram illustrating the structure of the extendedmemory unit 100 including the redundancy cell region 130 and theextended cell region 110. The structure of FIG. 17 is applied to thethird and fourth examples shown in FIGS. 13 to 16. Hereinafter, thestructure of FIG. 17 is explained with reference to FIG. 14 a.

Referring to FIG. 14 a, there are unit cellsin the redundancy cellregion 130 and the extended cell region 110. The control operation onthe control signals MBSW, SBPD, SBPU, SBSW2 and SBSW1 of FIG. 14 a is incommon when the redundancy cell region 130 or the extended cell region110 is accessed. However, the control operation of each plateline andeach wordline is separately performed in a corresponding region.

When the redundancy cell region 130 is accessed, a redundancy controller3 activates a control signal RED_EN. When the extended cell region 110is accessed, the extended memory controller 20 activates a controlsignal EXT_EN. When the control signal RED_EN is activated, a redundancydecoder 4 operates to control the redundancy cell region 130. When thecontrol signal EXT_EN is activated, a extended memory decoder 310operates to control the extended cell region 110. A sub bitlinecontroller 5 operates to control a sub bitline control switch 140 whenthe control signal RED_EN or EXT_EN is activated. The sub bitlinecontrol switch 140 controls the control signals MBSW, SBPD, SBPU, SBSW2and SBSW1 of FIG. 14 a.

FIG. 18 is a block diagram illustrating a register 500 for controllingthe extended memory controller 200.

In an embodiment, the ferroelectric memory device further comprises aprogram command decoder 300, a register controller 400, a register 500,a power-up circuit 600 and a control buffer block 700.

The register 500 including a ferroelectric capacitor can maintainexternally inputted data when power is off.

The program command decoder 300 decodes an external command signal toprogram the register. The register controller 400 stores predetermineddata in the register 500 when an output signal of the program commanddecoder 300 is activated. When the memory device is actually applied toa system, if the system power is on, the register controller 400 iscontrolled by the power-up circuit 600. The register controller 400reads data stored in the register if the reset signal RESET generatedfrom the power-up circuit 600 is activated. The register 500 isprogrammed to control a control signal ACTIVE.

External control signals outputted from an external control pad as wellas the control signal ACTIVE outputted from the register 500 areinputted into the control buffer block 700. In an embodiment, thecontrol buffer block 700 controls the extended memory controller 200 inresponse to the external control signals when the control signal ACTIVEis activated. If the control signal ACTIVE is inactivated, the extendedmemory unit 100 is not accessed although a signal is inputted into theexternal control pad.

In another embodiment, a plurality of the registers 500 may be used andthe control signal ACTIVE comprises a plurality of bits. If an externalcontrol signal inputted from the external control pad coincides with thecontrol signal ACTIVE, the control buffer block 700 decodes the externalcontrol signal and outputs a control signal corresponding to theexternal control signal into the extended memory control unit 200.However, when the external signal does not coincide with the code, theextended memory controller 200 is inactivated and the extended memoryunit 100 is not controlled.

FIG. 19 is a circuit diagram illustrating the register 500 of FIG. 18.The register 500 comprises a first amplifier 510, an input unit 520, astorage unit 530 and a second amplifier 540.

The first amplifier 510 comprises PMOS transistors P1, P2 and P3. ThePMOS transistor P1 has a gate to receive a first control signal ENP anda source connected to a positive power. The PMOS transistor P2 has agate connected to a first node, a source connected to a drain of thePMOS transistor P1, and a drain connected to a second node. The PMOStransistor P3 has a gate connected to the second node, a sourceconnected to the drain of the PMOS transistor P1, and a drain connectedto the first node.

The second amplifier 540 comprises NMOS transistors N3, N4 and N5. TheNMOS transistor N3 has a gate connected to the first node and a drainconnected to the second node. The NMOS transistor N4 has a gateconnected to the second node and a drain connected to the first node.The NMOS transistor N5 has a gate to receive a second control signalENN, a drain connected to a common source of the NMOS transistors N3 andN4, and a source connected to ground.

The input unit 520 comprises PMOS transistors P4 and P5, and NMOStransistors N1, N2 and N3. The PMOS transistor P4 has a gate to receivea NAND operation result of a data signal SET/RESET and a third controlsignal ENW, a source connected to a positive power, and a drainconnected to the second node. The NMOS transistor N1 has a gate toreceive an AND operation result of the data signal SET/RESET and thethird control signal ENW, a source connected to ground, and a drainconnected to the first node. The NMOS transistor N2 has a gate toreceive an AND operation result of a signal obtained by inverting thedata signal SET/RESET and the third control signal ENW, a sourceconnected to ground, and a drain connected to the second node. The PMOStransistor P5 has a gate to receive a NAND operation result of a signalobtained by inverting the data signal SET/RESET and the third controlsignal ENW, a source connected to a positive power, and a drainconnected to the first node.

The storage unit 530 comprises ferroelectric capacitors FC1, FC2, FC3and FC4. The ferroelectric capacitor FC1 is connected between a fourthcontrol signal CPL and the first node. The ferroelectric capacitor FC2is connected between the fourth control signal CPL and the second node.The ferroelectric capacitor FC3 is connected between the first node andground. The ferroelectric capacitor FC4 is connected between the secondnode and ground.

When the control signal ENP is “low” and the control signal ENN is“high”, the first amplifier 510 and the second amplifier 540 fix thefirst node and the second node at VCC and VSS (or vice versa) dependingon voltage difference between the first node and the second node. Whenthe control signal ENP is “high” and the control signal ENN is “low”,the register 500 is cut off from power.

When the control signal ENW is “high” and the data signal SET/RESET is“high”, the input unit 520 sets the first node “low” and the second node“high”. When the data signal SET/RESET is “low”, the input unit 520 setsthe first node “high” and the second node “low”. When the control signalENW is “low”, the first node and the second node are cut off from thedata signal SET/RESET.

The storage unit 530 stores data outputted to the first node and thesecond node in the ferroelectric capacitors FC1, FC2, FC3 and FC4 byregulating the control signal CPL.

The output signal ACTIVE is outputted from the second node.

FIG. 20 a is a timing diagram illustrating the write operation of theregister 500 of FIG. 19.

In an interval t2, if a program cycle starts, a register control signalis activated. Then, the control signal ENW is activated, the data signalSET/RESET is outputted into the first node and the second node. If thecontrol signal CPL becomes “high”, a signal is stored in theferroelectric capacitors FC1, FC2, FC3 and FC4 depending on voltages ofthe first node and the second node. For example, if the first node is“low” and the second node is “high”, charges of data are stored in theferroelectric capacitors FC1 and FC4.

In an interval t3, if the control signal ENW becomes “low”, the datasignal SET/RESET is separated from the first node and the second node.The voltage difference between the first node and the second node areamplified by the first amplifier 510 and the second amplifier 540.

In an interval t4, if the control signal CPL becomes “low”, the chargesare re-distributed among the ferroelectric capacitors FC1 to FC4. Here,the voltage of the second node becomes higher than that of the firstnode. The ferroelectric capacitors FC1˜FC4 maintain the charges evenwhen power is off.

FIG. 20 b is a timing diagram illustrating the read operation of theregister of FIG. 19.

In an interval t1, if power reaches a stable level, the reset signalRESET is generated. When the control signal CPL becomes “low” inresponse to the reset signal RESET, a voltage difference is generatedbetween the first node and the second node by the charges stored in theferroelectric capacitors FC1˜FC4. Here, the voltage of the second nodeis higher than that of the first node.

In an interval t2, when the control signal ENN becomes “high” and thecontrol signal ENP becomes “low”, the first amplifier 510 and the secondamplifier 540 are activated to amplify the voltages of the first nodeand the second node. Here, the first node is fixed at the “low” level,and the second node is fixed at the “high” level.

In an interval t3, when the control signal CPL becomes “low”, theoriginal data stored in the ferroelectric capacitors FC1˜FC4 arerestored.

FIG. 21 is a block diagram illustrating a ferroelectric memory deviceincluding an extended memory unit according to another embodiment of thepresent invention. In this embodiment, the ferroelectric memory devicefurther comprises an ECC controller 800.

When a fail cell occurs in the memory device applied to a system, theECC controller 800 controls the extended memory controller 200 to writeinformation of the fail cell and a redundancy cell in the extendedmemory unit 100. As a result, the extended memory unit 100 is used toperform a repair operation on the fail cell.

The redundancy operation performed in the redundancy cell region 130 isto replace the fail cell, which is identified during a memory devicetest with a spare cell in the redundancy cell region 130 when an addresscorresponding to the fail cell is inputted. An additional repair meansis required to perform a repair operation on the fail cell, which isidentified while the memory device is applied to a system. Theadditional repair means is the ECC controller 800. The ECC controller800 is disposed in the memory device and performs the repair operationon the fail cell in cooperation with the extended memory controller 200and the extended memory unit 100.

FIG. 22 is a block diagram illustrating the operation of the ECCcontroller 800 of FIG. 21. The ECC controller 800 receives a controlsignal ECC_ACT from a system. A system controller tests the memorydevice to detect the state of cell arrays. If a fail cell is found, anaddress of the fail cell is memorized. When the fail cell is accessed,the control signal ECC_ACT is activated. If the control signal ECC_ACTis activated, the ECC controller 800 is activated. As a result, acorresponding cell of the extended memory unit 100 is allowed to beaccessed instead of the fail cell.

FIG. 23 is a block diagram illustrating the structure of the extendedmemory unit 100 of FIG. 21.

The extended memory unit 100 comprises a first extended memory unit 101and a second extended memory unit 102. The second extended memory unit102 includes spare cells to replace fail cells. The first extendedmemory unit 101 includes cells to store addresses of fail cells andspare cells.

FIG. 24 is a block diagram illustrating the operation of the ECCcontroller 800 of FIG. 21 when a fail cell is repaired. If the controlsignal ECC_ACT is activated, the ECC controller 800 obtains an addressof a spare cell corresponding to an address of an inputted fail cellreferring to the first extended memory unit 101. Then, the ECCcontroller 800 inactivates the cell array block 10 including the failcell, and activates the second extended memory unit 102 including thespare cell. As a result, the redundancy operation can be performed onthe fail cell.

According to an embodiment of the present invention, additionalinformation such as hardware information, security information can bewritten in an extended memory unit included in a memory device. Theextended memory unit can share most control circuits because it has thesame structure as that of a normal cell array. Therefore, the extendedmemory unit can be added without increasing the size of a chip so much.

Additionally, since an ECC controller built in the memory device isclosely connected with the extended memory unit, a fail cell identifiedduring the operation can be repaired through the redundancy operation.

1. A ferroelectric memory device including an extended memory unit,comprising: a cell array block including a main bitline and a plurlaityof sub bitlines, the main bitline connected between a main bitlinepull-up controller and a column selection controller, and each subbitline connected to the main bitline and a unit cell; a data bus unitconnected to the column selection controller; an input/output circuitunit including a sense amplifier array connected to the data bus unit;an extended memory unit sharing the main bitline included in the cellarray block and including a plurality of cell blocks; and an extendedmemory controller for controlling the extended memory unit in responseto an external control signal.
 2. The device according to claim 1,wherein the main bitline pull-up controller is a PMOS transistor havinga gate to receive a control signal, a source connected to a positivepower and a drain connected to the main bitline.
 3. The device accordingto claim 1, wherein the column selection controller is a switch having agate to receive a control signal, a terminal connected to a main bitlineand the other terminal connected to a data bus line.
 4. The deviceaccording to claim 1, wherein the cell array block includes a pluralityof sub cell blocks corresponding to the plurality of sub bitlinesrespectively, each sub cell block comprising: a first NMOS transistorhaving a gate connected to a first terminal of the sub bitline and adrain connected to the main bitline; a second NMOS transistor having agate connected to a third control signal, a drain connected to a sourceof the first NMOS transistor and a grounded source; a third NMOStransistor having a gate connected to a fourth control signal, a drainconnected to a second terminal of the sub bitline and a grounded source;a fourth NMOS transistor having a gate connected to a fifth controlsignal, a source connected to the second terminal of the sub bitline anda dram connected to a sixth control signal; and a fifth NMOS transistorhaving a gate connected to a seventh control signal, a drain connectedto the main bitline and a source connected to the second terminal fo thesub bitline.
 5. The device according to claim 4, wherein the cell blockincluded in the extended memory unit has the same structure as that ofthe sub cell block.
 6. The device according to claim 5, wherein a partof the cell block is used as a redundancy cell region and the rest partof the cell block is used as an extended cell region.
 7. The deviceaccording to claim 6, further comprising: a redundancy decoder fordriving a wordline/plateline included in the redundancy cell region whenthe redundancy cell region is accessed; an extended memory decoder fordriving a wordline/plateline includded in the extended cell region whenthe extended cell region is accessed; and a sub bitline controller foroutputting a plurality of control signals corresponding to the first tothe seventh control signals commonly used in the sub cell block and thecell block.
 8. The device according to claim 4, wherein the extendedmemory unit comprises a cell block having the same structure as that ofthe sub cell block, wherein the cell block comprises smaller number ofunit cells than those of the sub cell block, and a capacitor forcompensating for difference in capacitance resulting from difference inthe number of the unit cells, and wherein the capacitor is connectedbetween a sub bitline included in the cell block and ground.
 9. Thedevice according to claim 8, wherein the extended memory unit uses apart of the unit cell in the cell block as the redundancy cell region,and the rest part of the unit cell as the extended cell region.
 10. Thedevice according to claim 9, further comprising: a redundancy decoderfor driving a wordline/plateline included in the redundancy cell regiononly when the redundancy cell region is accessed; an extended memorydecoder for driving a wordline/plateline included in the extended cellregion only when the extended cell region is accessed; and a sub bitlinecontroller for outputting a plurality of control signals correspondingto the first to the seventh control signals commonly used in the subcell block and in the cell block.
 11. A ferroelectric memory deviceincluding an extended memory unit, comprising: a controller for storinga predetermined key value in response to an external command signal, foroutputting an extended memory control signal corresponding to theexternal control signal when the external control signal satisfies apredetermined condition of the key value, and for maintaining the storedkey value when power is off; and an extended memory unit including aplurality of cells for storing predetermined data in response to theextended memory control signal, the plurality of cells sharing existingbitlines.
 12. The device according to claim 11, wherein the controllercomprises: a program command decoder for decoding the external commandsignal and outputting a program command signal; a power-up circuit foroutputting a reset signal which is inactivated after power is turned onand stabilized; a register controller for outputting a register controlsignal to control the program process when the program command signal isactivated and to control the process of reading the program result whenthe reset signal is inactivated; a register for storing a key valuecorresponding to a data signal supplied externally in response to theregister control signal, for outputting the stored key value externally,and for maintaining the stored key value when power is off; and anextended memory controller for controlling the extended memory unit inresponse to a key value outputted from the register and an externalcontrol signal.
 13. The device according to claim 12, wherein theregister comprises: a first amplifier for amplifying a voltage of a nodehaving higher voltage between first and second nodes to a positivevoltage in response to a first control signal; a second amplifier foramplifying a voltage of a node having lower voltage between the firstand the second nodes to a ground voltage in response to a second controlsignal; an input unit for outputting a data signal into the first andthe second nodes in response to a third control signal; and a storageunit for storing the signal outputted into the first and the secondnodes in response to a fourth control signal and for maintaining thestored information when power is off.
 14. The device according to claim13, wherein the first amplifier comprises: a first PMOS transistorhaving a gate to receive the first control signal and a source connectedto a positive power; a second PMOS transistor having a gate connected tothe first node, a source connected to a drain of the first PMOStransistor and a drain connected to the second node; and a third PMOStransistor having a gate connected to the second node, a sourceconnected to the drain of the first PMOS transistor and a drainconnected to the first node.
 15. The device according to claim 13,wherein the second amplifier comprises: a first NMOS transistor having agate connected to the first node and a drain connected to the secondnode; a second NMOS transistor having a gate connected to the secondnode and a drain connected to the first node; and a third NMOStransistor having a gate to receive the second control signal, a drainconnected to sources of the first NMOS transistor and the second NMOStransistor, and a source connected to ground.
 16. The device accordingto claim 13, wherein the input unit comprises: a first PMOS transistorhaving a gate to receive a NAND operation result of the data signal andthe third control signal, a source connected to a positive power and adrain connected to the second node; a first NMOS transistor having agate to receive an AND operation result of the data signal and the thirdcontrol signal, a source connected to ground and a drain connected tothe first node; a second NMQS transistor having a gate to receive an ANDoperation result of a signal having an opposite level to the data signaland the third control signal, a source connected to ground and a drainconnected to the second node; and a second PMOS transistor having a gateto receive a NAND operation result of a signal having an opposite levelto the data signal and the third control signal, a source connected to apositive power and a drain connected to the first node.
 17. The deviceaccording to claim 13, wherein the storage unit comprises: a firstferroelectric capacitor having a first terminal to receive the fourthcontrol signal and a second terminal connected to the first node; asecond ferroelectric capacitor having a first terminal to receive thefourth control signal and a second terminal connected to the secondnode; a third ferroelectric capacitor having a first terminal connectedto the first node and a second terminal connected to ground; and afourth ferroelectric capacitor having a first terminal connected to thesecond node and a second terminal connected to ground.
 18. Aferroelectric memory device including an extended memory unit,comprising: an ECC controller for outputting an extended memory controlsignal in response to a repair request signal activated when a fail cellis accessed, and for inactivating the fail cell; an extended memory unitincluding a redundancy cell for replacing the fail cell; and an extendedmemory controller for controlling the extended memory unit in responseto the extended memory control signal, wherein the repair request signalis generated by an outer system when the failed cell is about to beaccessed by the outer system.
 19. The device according to claim 18,wherein the extended memory unit comprises: a first extended memory unitfor storing an address of the fail cell and an address of the redundancycell corresponding to the fail cell; and a second extended memory unitincluding the redundancy cell, wherein the extended memory controllercontrols the redundancy cell using the address of the redundancy cellobtained from the first extended memory unit.